Infrared optical anisotropy of diluted magnetic Ga1−xMnxN/c-sapphire epilayers grown with a GaN buffer layer by metalorganic chemical vapor deposition
نویسندگان
چکیده
Z. G. Hu,1 A. B. Weerasekara,1 N. Dietz,1 A. G. U. Perera,1,* M. Strassburg,1,2 M. H. Kane,2,3 A. Asghar,2 and I. T. Ferguson2,3 1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA 3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA Received 19 October 2006; revised manuscript received 9 March 2007; published 14 May 2007
منابع مشابه
Magnetic and optical properties of Ga1−xMnxN grown by metalorganic chemical vapour deposition
Epitaxial layers of Ga1−xMnxN with concentrations of up to x = 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapour deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystalline quality and surface structure were measured by x-ray diffraction and atomic force microscopy, respectively. No significant deterioration in crystal...
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